Structural and electrical properties of liquid phase epitaxially grown Y1Ba2Cu3Ox films

Y1Ba2Cu3OX films, ranging in thickness from 0.9 to 10 mu m, were grown on Mgo(100) substrates by liquid phase epitaxy. These films were characterized structurally and electrically. From theta-2 theta and phi scan X-ray diffraction, and Rutherford backscattering spectrometry measurements, it was found that the films were c-axis oriented and had good in-plane alignment, showing that good epitaxial growth was achieved. The T-c,T-end values in a 20 mm long and 15 mm wide Y1Ba2Cu3Ox film exceeded 90 K. The T-c and resistivity values did not become degraded after patterning into a strip. Although J(c) values decreased with increasing film thickness, even a 7 mu m-thick film showed a J(c) value of 9.3 X 10(5) A/cm(2) at 77 K. These data are comparable to those reported for Y1Ba2Cu3Ox films prepared on CeO2/YSZ(100) by pulse laser deposition, and thought to be due to the c-axis orientation and good in-plane alignment of the liquid phase epitaxially grown thick films.