Electrochemically induced atom-by-atom growth of ZnS thin films:: A new approach for ZnS co-deposition

被引:38
作者
Öznülüer, T [1 ]
Erdogan, I [1 ]
Demir, Ü [1 ]
机构
[1] Ataturk Univ, Arts & Sci Fac, Dept Chem, TR-25240 Erzurum, Turkey
关键词
D O I
10.1021/la052404g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ultrathin films of ZnS were grown on Au (111) substrates using a novel, simple co-deposition method and characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. Cyclic voltammograms were used to determine approximate deposition potentials for co-deposition. XRD shows that the material growth is highly preferential with (111) orientation. Both AFM and XRD data indicate that the ZnS growth mechanism starts by the formation of rounded nanoparticles at the surface and then continues by lateral and vertical growth to form flat square crystallites of ZnS. UV-vis spectra taken for the ZnS thin films with various thicknesses, which is related to deposition time, shows that the band gap of the ZnS decreases as the film thickness increases.
引用
收藏
页码:4415 / 4419
页数:5
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