Stable emission from a MOSFET-structured emitter tip in poor vacuum

被引：21

作者：

Kanemaru, S

Hirano, T

Honda, K

Itoh, J

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Kobe Steel Ltd, Nishi Ku, Kobe, Hyogo 6512271, Japan

[3] Futaba Corp, Chiba 2994395, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 146卷 / 1-4期

关键词：

field emitter; stability of emission currents; FET controlled emission; silicon field emitter array;

D O I：

10.1016/S0169-4332(99)00006-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the operation of Metal-Oxide-Silicon Field-Effect-Transistor (MOSFET) structured silicon filed emitters under poor vacuum conditions. The MOSFET-structured field emitter consists of a field emitter tip and a built-in MOSFET. Measurements in various gases were performed at pressures between 10(-9) and 10(-5) Ton. Emission currents of conventional Si field emitter tips were not stable due to the adsorption of the residual gas and the ion bombardment to the tip. in the MOSFET-structured emitter, the fluctuation of emission currents in each gas was fully suppressed and the current was very stable. This emitter tip kept stable emission even at pressure of 10(-5) Torr, (C) 1999 Elsevier Science B.V, All rights reserved.

引用

页码：198 / 202

页数：5

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