Coulomb gap of coupled quantum dots with adjustable interdot tunneling

被引：14

作者：

Crouch, CH

Livermore, C

Waugh, FR

Westervelt, RM

Campman, KL

Gossard, AC

机构：

[1] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA

[2] UNIV CALIF SANTA BARBARA, DEPT MAT, SANTA BARBARA, CA 93106 USA

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

aluminum gallium arsenide; Coulomb blockade; electrical transport measurements; gallium arsenide; semiconductor quantum dot;

D O I：

10.1016/0039-6028(96)00487-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report low-temperature tunneling measurements at zero magnetic field through a double quantum dot with adjustable interdot tunneling rate, fabricated in a GaAs/AlGaAs heterostructure. We have measured the dependence of the current-voltage characteristic on interdot tunneling, and find that the Coulomb gap decreases continuously from that of two dots in series to that of a single large dot with twice the total capacitance as the interdot tunneling is increased from near zero to 2e(2)/h. These results are in agreement with many-body charge fluctuations due to tunneling between the dots.

引用

页码：631 / 635

页数：5

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