Metal gate work function engineering using AlNx interfacial layers

被引：52

作者：

Alshareef, HN ^{[1
]}

Luan, HF ^{[1
]}

Choi, K ^{[1
]}

Harris, HR ^{[1
]}

Wen, HC ^{[1
]}

Quevedo-Lopez, MA ^{[1
]}

Majhi, P ^{[1
]}

Lee, BH ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78781 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.2186517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal gate work function enhancement using thin AlNx interfacial layers has been evaluated. It was found that band edge effective work functions (similar to 5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlNx interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlNx interfacial layer increased when the concentration of SiO2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO2 and maximum for SiO2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model. (c) 2006 American Institute of Physics.

引用

页数：3

共 6 条

[1]

ALSHAREEF HN, 2005, FUTURE FAB, V19, P91

[2]

Dean J.A., 2001, Lange's Handbook of Chemistry, V15

[3]

HAUSER JR, CVS 2000 NCSU SOFTWA

[4]

PARK CS, 2003, VLSI, P149

[5] Band offsets of wide-band-gap oxides and implications for future electronic devices [J].