X-Ray, kinetic and optical properties of thin CuInS2 films

被引：26

作者：

González-Hernández, J

Gorley, PM

Horley, PP

Vartsabyuk, OM

Vorobiev, YV

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] CINVESTAV, IPN, Queretaro 76001, QRO, Mexico

来源：

THIN SOLID FILMS | 2002年 / 403卷

关键词：

CuInS2; films; spraying; pyrolysis; X-ray diffraction; absorption spectra;

D O I：

10.1016/S0040-6090(01)01543-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present the copper indium disulfide thin films production technology by spraying with further pyrolysis, and the results of the investigation of X-ray. kinetic and optical properties of manufactured films at 300 K. It was shown that the conductivity type and specific resistance values depend on chemical elements that dominate in the solution (indium or copper).The band gap value for CuInS2 films, measured by absorption spectra analysis was within the range of 1.3-1.5 eV, depending on molar composition of components, temperature and type of substrate. It was shown that if the anisotropy and non-parabolicity of the hole dispersion law in D-2d(12) crystals are left without consideration, it will lead to significant errors in determination of semiconductor material parameters with chalcopyrite structure. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：471 / 475

页数：5

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