Modeling the influence of charge traps on single-layer organic light-emitting diode efficiency

被引:32
作者
Konezny, SJ [1 ]
Smith, DL
Galvin, ME
Rothberg, LJ
机构
[1] Univ Rochester, Dept Chem, Rochester, NY 14627 USA
[2] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[3] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[4] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2186374
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate theoretically the role of carrier trapping on the efficiency of single-layer organic light-emitting diodes (OLEDs) by incorporating traps into the OLED device model of Davids [J. Appl. Phys. 82, 6319 (1997)]. Carrier trapping directly affects the density and mobility balance between electrons and holes through its effects on injection and mobility. In addition, trap-mediated changes in density alter recombination rates and spatial profiles of recombination that become important when excited state quenching at metallic contacts is considered. We illustrate these various influences of traps on device efficiency through computations on a series of model devices. Good agreement is obtained with previous experiments by Menon [Chem. Mater. 14, 3668 (2002)], where energetic disorder from transport traps was shown to reduce device efficiency. Our model, however, predicts circumstances where traps will improve device efficiency as well and can assist with selection of contacts to realistic organic materials. (c) 2006 American Institute of Physics.
引用
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页数:12
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