Steam stability of a silica membrane prepared by counter-diffusion chemical vapor deposition

被引:41
作者
Nomura, Mikihiro
Aida, Hitoshi
Gopatakrishnan, Suraj
Sugawara, Takashi
Nakao, Shin-ichi
Yamazaki, Satoshi
Inada, Takeshi
Iwamoto, Yuji
机构
[1] Univ Tokyo, Fac Engn, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan
关键词
counter-diffusion CVD; silica membrane; alumina substrate; TEM observation;
D O I
10.1016/j.desal.2005.08.019
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
A silica membrane having an excellent H-2/N-2 permeance ratio (over 800) was prepared by the counter-diffusion chemical vapor deposition method. The H-2/N-2 permeance ratio was kept for 82 h under 76 kPa of steam at 773 K. The H-2/H2O permeance ratio through the silica membrane was ca. 300 at 773 K. This is much higher than that through silica membranes prepared by a sol-gel method. The deposited silica layer was found in the gamma-alumina layer of the substrate by TEM observations, indicating that the silica deposition is controlled by counter-diffusion of the precursors. Steam stability tests for porous gamma-alumina substrates are also discussed. Pore size of the y-alumina layer increased with an increasing steam treatment period at 773 K. The pore size of they-alumina layer was ca. 9 nm after 52 h of steam treatment.
引用
收藏
页码:1 / 7
页数:7
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