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Novel SiGeC channel heterojunction PMOSFET
被引：11
作者：
Ray, SK
John, S
Oswal, S
Banerjee, SK
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553580
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The fabrication and characterization of heterojunction PMOSFETs with strain-engineered Si1-x-yGexCy channel is reported for the first time. The study has demonstrated the performance enhancement of partially strain compensated Si0.793Ge0.2C0.007 MOSFET over fully-strained metastable Si0.8Ge0.2 channel. Complete strain compensation by incorporating higher amounts of C (Ge-to-C ratio equals 10:1), however, results in the degradation of device characteristics as compared to the Si1-xGex sample.
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页码：261 / 264
页数：4
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