Preparation and properties of reactive-sputtered amorphous CNx films

被引：45

作者：

Takada, N

Arai, K

Nitta, S

Nonomura, S

机构：

[1] Dept. of Electron. and Comp. Eng., Gifu University, Gifu 501-11

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

a-CNx; nitrogen-carbon ratio; infrared absorption spectra; optical gap; Dc conductivity; hydrogen-plasma treatment;

D O I：

10.1016/S0169-4332(96)00772-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We prepared amorphous CNx films by a rf reactive magnetron sputtering using Ar-N-2 mixed gas and a graphite target. The nitrogen-carbon ratio x = N/C in films determined by the XPS increased from 0.48 to 0.62 as increasing the nitrogen partial pressure ratio r = p(N2)/(pN(2) + p(Ar)). Optical energy gap E-o obtained by the Tauc's plots increased from 1.4 to 1.6 eV with the nitrogen-carbon ratio x. Dangling bonds density of a-CNx was 10(18) to 10(19) cm(-3) from ESR measurement. Dc conductivity of a-CNx is very small. As irradiated Xe lamp, photoconductivity was observed. The hydrogenation of a-CNx was tried by a hydrogen-plasma treatment.

引用

页码：274 / 277

页数：4

共 4 条

[1] SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS [J].