An analytical modeling of time dependent pulsed laser melting

被引:46
作者
Tokarev, VN
Kaplan, AFH
机构
[1] Vienna Univ Technol, Dept Laser Technol, A-1030 Vienna, Austria
[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
关键词
D O I
10.1063/1.371132
中图分类号
O59 [应用物理学];
学科分类号
摘要
The one-dimensional time dependent heat conduction equation for surface heating and a phase boundary (the so-called classical Stefan problem) has been solved in the absence of vaporization. For a rectangular laser pulse and constant material parameters, useful solutions have been determined for melt depth as a function of time both during and following the pulse. Based on the model, the intensity dependence of the melt depth is investigated. Two melting regimes-slow and fast-have been identified by comparison with previously reported data for silicon. (C) 1999 American Institute of Physics. [S0021-8979(99)00517-4].
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页码:2836 / 2846
页数:11
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