All-CMOS temperature independent current reference

被引：35

作者：

Lee, CH

Park, HJ

机构：

[1] Department of Electrical Engineering, Pohang Univ. of Sci. and Technology, PIRL, Pohang, Kyungbuk, 790-784

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 14期

关键词：

reference circuits; CMOS integrated circuits;

D O I：

10.1049/el:19960827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AU-CMOS temperature independent current reference circuit was designed by eliminating the mobility dependence term through the combination of a current source which is proportional to mobility and one which is inversely proportional to mobility by using a CMOS square root circuit. The test chip fabricated using a 2 mu m n-well CMOS process showed a 1.7% variation in the average for the temperature range 0 to 75 degrees C.

引用

页码：1280 / 1281

页数：2