Studies on the relaxor behavior of sol-gel derived Ba(ZrxTi1-x)O3 (0.30≤x≤0.70) thin films

被引:71
作者
Dixit, A
Majumder, SB
Katiyar, RS [1 ]
Bhalla, AS
机构
[1] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
D O I
10.1007/s10853-005-5929-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the relaxor behavior of sol-gel derived Ba(ZrxTi1-x)O-3 (0.30 <= x <= 0.70) thin films. The plausible mechanism of the relaxor behavior has been analyzed from the dielectric data and micro-Raman spectra. Substitution of Zr+4 for Ti+4 in BaTiO3 lattice reduces its long-range polarization order yielding a diffused paraelectric to ferroelectric phase transition. The solid solution system is visualized as a mixture of Ti+4 rich polar region and Zr+4 rich regions and with the increase in Zr contents the volume fraction of the polar regions are progressively reduced. At about 25.0 at% Zr contents the polar regions exhibit typical relaxor behavior. The degree of relaxation increases with Zr content and maximizes at 40.0 at% Zr doped film. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (T-f). Below T-f, a long range polarization ordering was ascertained from the polarization hysteresis measurement. (c) 2006 Springer Science + Business Media, Inc.
引用
收藏
页码:87 / 96
页数:10
相关论文
共 28 条
[1]   Ferroelectric relaxor Ba(TiCe)O3 [J].
Ang, C ;
Jing, Z ;
Yu, Z .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (38) :8901-8912
[2]   CRYSTALLINE FERROELECTRICS WITH GLASSY POLARIZATION BEHAVIOR [J].
BURNS, G ;
DACOL, FH .
PHYSICAL REVIEW B, 1983, 28 (05) :2527-2530
[3]   RELAXOR FERROELECTRICS: AN OVERVIEW [J].
Cross, L. Eric .
FERROELECTRICS, 1994, 151 (01) :305-320
[4]  
CROSS LE, 1987, FERROELECTRICS, V76, P241, DOI 10.2109/jcersj.99.829
[5]   Relaxor behavior in sol-gel-derived BaZr(0.40)Ti(0.60)O3 thin films [J].
Dixit, A ;
Majumder, SB ;
Katiyar, RS ;
Bhalla, AS .
APPLIED PHYSICS LETTERS, 2003, 82 (16) :2679-2681
[6]   Phase transition studies of sol-gel deposited barium zirconate titanate thin films [J].
Dixit, A ;
Majumder, SB ;
Dobal, PS ;
Katiyar, RS ;
Bhalla, AS .
THIN SOLID FILMS, 2004, 447 :284-288
[7]   Investigations on the sol-gel-derived barium zirconium titanate thin films [J].
Dixit, A ;
Majumder, SB ;
Savvinov, A ;
Katiyar, RS ;
Guo, R ;
Bhalla, AS .
MATERIALS LETTERS, 2002, 56 (06) :933-940
[8]   A Raman and dielectric study of ferroelectric Ba(Ti1-xZrx)O3 ceramics [J].
Farhi, R ;
El Marssi, M ;
Simon, A ;
Ravez, J .
EUROPEAN PHYSICAL JOURNAL B, 1999, 9 (04) :599-604
[9]   A random field theory based model for ferroelectric relaxors [J].
Glinchuk, MD ;
Farhi, R .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (37) :6985-6996
[10]   Artificial control of order degree state of B-site ions in Ba(Zr,Ti)O3 by a superlattice technique [J].
Hotta, Y ;
Hassink, GWJ ;
Kawai, T ;
Tabata, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9B) :5908-5912