Effect of impurities on the transport properties in the VanHove scenario

被引：15

作者：

Hlubina, R

机构：

[1] SCH ADV INT STUDIES,I-34014 TRIESTE,ITALY

[2] COMENIUS UNIV BRATISLAVA,BRATISLAVA 84215,SLOVAKIA

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.53.11344

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using standard transport theory, we calculate the temperature and doping dependence of the resistivity and diffusion thermopower due to impurity scattering for two-dimensional electrons whose Fermi energy is close to a Van Hove point. An argument is presented for the doping dependence of the diffusion thermopower for arbitrary scattering in this so-called Van Hove scenario.

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页码：11344 / 11347

页数：4

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