Design and analysis of a 512 x 768 current-mediated active pixel array image sensor

被引:18
作者
McIlrath, LG [1 ]
Clark, VS [1 ]
Duane, PK [1 ]
McGrath, RD [1 ]
Waskurak, WD [1 ]
机构
[1] POLAROID CORP,CAMBRIDGE,MA 02139
基金
美国国家科学基金会;
关键词
D O I
10.1109/16.628826
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Current-mediated, current-output active pixels offer the advantages of compact size and simple operation in designing large format CMOS image sensors, with performance limited by spatial lived pattern noise. In this paper, a thorough noise analysis is made of the expected performance of a current-output pixel image sensor. This analysis is compared with experimental results from a 512x768 array imager fabricated in a 0.7-mu m process, and the effectiveness of basic error correction techniques are explored. The goal of this study was to determine the performance limits of this device and to gain insight into the design issues needed to develop a high-quality current-output imager.
引用
收藏
页码:1706 / 1715
页数:10
相关论文
共 12 条
[1]  
DICKINSON A, 1995, ISSCC FEB, P226
[2]  
FOSSUM ER, 1995, 1995 IEEE WORKSH CHA
[3]  
Gray P. R., 1993, ANAL DESIGN ANALOG I
[4]  
KEMENY S, 1995, 1995 IEEE WORKSH CHA
[5]  
LEE PPK, 1995, 1995 IEEE WORKSH CHA
[6]  
MCGRATH RD, P 1997 IEEE INT SOL, P182
[7]  
MENDIS S, 1993, P IEEE INT C EL DEV, P583
[8]   CMOS active pixel image sensors for highly integrated imaging systems [J].
Mendis, SK ;
Kemeny, SE ;
Gee, RC ;
Pain, B ;
Staller, CO ;
Kim, QS ;
Fossum, ER .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (02) :187-197
[9]  
RICQUIER N, 1995, 1995 IEEE WORKSH CHA
[10]  
*SEM IND ASS, 1994, NAT TECHN ROADM SEM