Series resistance imaging in solar cells by lock-in thermography

被引:37
作者
Breitenstein, O
Rakotoniaina, JP
van der Heide, ASH
Carstensen, J
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany
[2] Energy Res Ctr Netherlands ECN, NL-1755 LE Petten, Netherlands
[3] Univ Kiel, D-24143 Kiel, Germany
来源
PROGRESS IN PHOTOVOLTAICS | 2005年 / 13卷 / 08期
关键词
silicon solar cells; series resistance; lock-in thermography;
D O I
10.1002/pip.623
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Two operation modes of lock-in thermography are introduced to detect regions of high series resistance in solar cells. These are differential techniques, working in the dark and under illumination, where images taken under two different conditions are used to calculate an image, which is especially sensitive to series resistance variations. Though the series resistance cannot be measured quantitatively by these techniques, regions of increased emitter contact resistance can be reliably detected. A realistic electrothermal modelling of a series resistance defect in a solar cell with and without illumination is presented. The new thermographic techniques are compared with established techniques for series resistance imaging. Especially the technique working under illumination gives results that agree very well with those of other methods. Copyright (c) 2005 John Wiley & Sons, Ltd.
引用
收藏
页码:645 / 660
页数:16
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