Temperature-dependent hole transport in GaN

被引：28

作者：

Lancefield, D ^{[1
]}

Eshghi, H

机构：

[1] Univ Surrey, Dept Phys, Sch Phys & Chem, Guildford GU2 7XH, Surrey, England

[2] Shahroud Univ, Dept Phys, Shahroud 31636155SHA, Iran

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 40期

关键词：

D O I：

10.1088/0953-8984/13/40/308

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transport properties of Mg-doped, p-type GaN films. grown by MOCVD have been measured using Hall effect and resistivity measurements over a temperature range of 400-120 K. The mobility is found to increase slowly over the temperature range of 400-150 K. Below this temperature the mobility is seen to decrease rapidly, while the corresponding Hall carrier density goes through a minimum before increasing to lower temperatures. These results have been analysed, using a two-band model. This incorporates a simple valence band model, calculated using a relaxation time approximation, and additional transport within an acceptor impurity band. A good fit has been obtained self-consistently to both the mobility and carrier density over a temperature range of 400-120 K. We find that neutral scattering plays an important role in limiting the hole mobility.

引用

页码：8939 / 8944

页数：6

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