Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface

被引：2

作者：

Colonna, S

Ronci, F

Cricenti, A

Perfetti, L

Berger, H

Grioni, M

机构：

[1] CNR, Ist Struttura Mat, I-00133 Rome, Italy

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] Ecole Polytech Fed Lausanne, Inst Phys Nanostruct, CH-1015 Lausanne, Switzerland

[4] Ecole Polytech Fed Lausanne, Inst Phys Matiere Complexe, CH-1015 Lausanne, Switzerland

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 3B期

关键词：

STM; carge density wave; TaSe2; Mott transition;

D O I：

10.1143/JJAP.45.1950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250K in agreement with previous photoemission Measurements.

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页码：1950 / 1952

页数：3

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