High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates

被引：8

作者：

Chou, YC ^{[1
]}

Leung, D ^{[1
]}

Scarpulla, J ^{[1
]}

Lai, R ^{[1
]}

Barsky, M ^{[1
]}

Grundbacher, R ^{[1
]}

Nishimoto, M ^{[1
]}

Liu, PH ^{[1
]}

Streit, DC ^{[1
]}

机构：

[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-reliability performance of K-band MMIC amplifiers fabricated with 0.1 mum gate length InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at two-temperatures (T-1=230 degreesC, and T-2=250 degreesC) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTF) > 1x10(6) hours at a 125 degreesC junction temperature. MTF was determined by 2T constant current stress using \ Delta S21 \ > 1.0 dB as the failure criteria. This is the first report of high reliability 0.1 mum InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology.

引用

页码：618 / 621

页数：4

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Barsky, M ;

Grundbacher, R ;

Liu, PH ;

Chin, TP ;

Nishimoto, M ;

Elmajarian, R ;

Rodriguez, R ;

Tran, L ;

Gutierrez, A ;

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