Porous silica materials as low-k dielectrics for electronic and optical interconnects

被引:158
作者
Jain, A
Rogojevic, S
Ponoth, S
Agarwal, N
Matthew, I
Gill, WN
Persans, P
Tomozawa, M
Plawsky, JL [1 ]
Simonyi, E
机构
[1] Rensselaer Polytech Inst, Dept Chem Engn, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[3] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
[4] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA
[5] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
dielectrics; optical coatings; porous materials; elastic modulus; interfaces; diffusion of metals;
D O I
10.1016/S0040-6090(01)01311-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The need to decrease signal delay and cross-talk in interconnects within integrated circuits is becoming increasingly important as device dimensions shrink. Electrical connections require lower resistivity metals and lower dielectric constant insulating films to meet future goals. Even these materials may not provide for sufficient signal bandwidth, and so optical interconnections are also envisioned. Porous materials offer the opportunity to fabricate scaleable dielectric constant materials for both electrical and optical interconnections. At Rensselaer, we have been working on projects using porous silica materials (xerogels) as low-k dielectrics for electrical interconnections and as low refractive index 'cladding' materials for optical interconnections. This paper focuses on the relationship between the porosity of the material and its optical, electrical, interfacial and mechanical properties. We find porosity has profound effects on the adhesion and stability of thin metal or dielectric films deposited on porous materials. In some instances, such as copper, porosity actually enhances the stability of the film. In others, such as silicon dioxide or tantalum, small changes in porosity lead to buckling or delamination of the film. The interfacial properties also affect the diffusion of metals into these films. The leakage current of copper into porous silica films is an order of magnitude or more less than that through solid SiO2. This may be the result of surface passivation processes used to make the materials hydrophobic. The elastic modulus of the films varies as a power law with density in accordance with the prediction for open-cell foam materials. Finally, the optical properties of waveguides formed using porous silica claddings are discussed. Core/cladding refractive index differences of 0.6 or more are possible for compact optical waveguide interconnects. Low refractive index, space-filling porous materials may also find uses in photonic crystal applications. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:513 / 522
页数:10
相关论文
共 29 条
[1]   DEPENDENCE OF THE ELASTIC-MODULI OF POROUS SILICA-GEL PREPARED BY THE SOL-GEL METHOD ON HEAT-TREATMENT [J].
ADACHI, T ;
SAKKA, S .
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (11) :4732-4737
[2]   ELASTIC PROPERTIES OF POROUS SILICA DERIVED FROM COLLOIDAL GELS [J].
ASHKIN, D ;
HABER, RA ;
WACHTMAN, JB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3376-3381
[3]   Mechanical properties of xerogel silica films derived from stress versus temperature and cracking experiments [J].
Chow, LA ;
Dunn, B ;
Tu, KN ;
Chiang, C .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7788-7792
[4]   Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep [J].
Cohen, SA ;
Liu, J ;
Gignac, L ;
Ivers, T ;
Armbrust, D ;
Rodbell, KP ;
Gates, SM .
LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 :189-196
[5]  
Emmerling A, 1997, J SOL-GEL SCI TECHN, V8, P781, DOI 10.1007/BF02436938
[6]   FLOW OF A VISCOUS LIQUID ON A ROTATING DISK [J].
EMSLIE, AG ;
BONNER, FT ;
PECK, LG .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) :858-862
[7]  
GIBSON LJ, 1997, CELLULAR SOLIDS
[8]   MECHANICAL-PROPERTIES OF SIO2 AEROGELS [J].
GROSS, J ;
REICHENAUER, G ;
FRICKE, J .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (09) :1447-1451
[9]   CHARACTERIZATION OF HIGH-RATE DEPOSITED PECVD SILICON DIOXIDE FILMS FOR MCM APPLICATIONS [J].
HAQUE, MS ;
NASEEM, HA ;
BROWN, WD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (11) :3864-3869
[10]   SOME EFFECTS OF SUBSTRATE ROUGHNESS ON WETTABILITY [J].
HITCHCOCK, SJ ;
CARROLL, NT ;
NICHOLAS, MG .
JOURNAL OF MATERIALS SCIENCE, 1981, 16 (03) :714-732