Filtered cathodic vacuum arc deposition of thin film copper

被引:10
作者
Lau, SP
Cheng, YH
Shi, JR
Cao, P
Tay, BK
Shi, X
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Nanofilm Technol Int, Singapore 139959, Singapore
关键词
filtered cathodic vacuum arc; copper films;
D O I
10.1016/S0040-6090(01)01315-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A major obstacle for metallization application of filtered cathodic vacuum arc (FCVA) is the presence of micro-particles. By using an off-plane double bend magnetic filter, metallic films can be deposited with relevant deposition rates and free of microparticles. Clean copper thin films with low electrical resistivity were deposited by filtered cathodic vacuum arc techniques at room temperature. All the copper films have a polycrystalline structure and preferably oriented to (111). When the substrate bias is applied, the (111) orientation of Cu film is further enhanced. The internal stress of the films is strongly dependent on the substrate bias. When the bias increases from 0 to -600 V, the internal stress of the film changes from tensile to compressive. At the bias of -300 V, a stress-free Cu film can be obtained. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:539 / 543
页数:5
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