Electron and hole spectra of silicon quantum dots

被引：28

作者：

Burdov, VA ^{[1
]}

机构：

[1] NI Lobachevskii State Univ, Nizhnii Novgorod 603600, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2002年 / 94卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1458492

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the framework of perturbation theory, the first several one-particle energies and wave functions for electrons and holes (six for each) in spherical silicon quantum dots are obtained in the envelope function approximation (kp method). It is shown that the model of an isotropic dispersion relation with the mean reciprocal effective mass is applicable for the ground state of holes in the valence band. Anisotropy of the dispersion relation, which takes place for bulk semiconductors, becomes significant for the electron ground state in the conduction band as well as for all excited (both electron and hole) states. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：411 / 418

页数：8

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