Blue laser on high N2 pressure-grown bulk GaN

被引:16
作者
Grzegory, I
Bockowski, M
Krukowski, S
Lucznik, B
Wroblewski, M
Weyher, JL
Leszczynski, M
Prystawko, P
Czernecki, R
Lehnert, J
Nowak, G
Perlin, P
Teisseyre, H
Purgal, W
Krupczynski, W
Suski, T
Dmowski, LH
Litwin-Staszewska, E
Skierbiszewski, C
Lepkowski, S
Porowski, S
机构
[1] Polish Acad Sci, High Pressure Res Ctr, UNIPRESS, Crystal Growth Lab, PL-01142 Warsaw, Poland
[2] Polish Acad Sci, High Pressure Res Ctr, UNIPRESS, Lab Epitaxy, PL-01142 Warsaw, Poland
[3] Polish Acad Sci, High Pressure Res Ctr, UNIPRESS, Lab Proc, PL-01142 Warsaw, Poland
[4] Polish Acad Sci, High Pressure Res Ctr, UNIPRESS, Phys Properties Lab, PL-01142 Warsaw, Poland
关键词
D O I
10.12693/APhysPolA.100.229
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:229 / 232
页数:4
相关论文
共 2 条
[1]   The application of high pressure in physics and technology of III-V nitrides [J].
Grzegory, I ;
Krukowski, S ;
Leszczynski, M ;
Perlin, P ;
Suski, T ;
Porowski, S .
ACTA PHYSICA POLONICA A, 2001, 100 :57-109
[2]  
NAKAMURA S, 1997, BLUE LASER DIODES