Preparation of PZT, PLZT and Bi4Ti3O12 thin films from oxide precursors

This work describes a method for preparation of ferroelectric thin films based on a pre-calcination of oxides, to be used as precursor material for a solution preparation. In or der to show the viability of the proposed method PZT, PLZT and Bi4Ti3O12 thin films were prepared. The results were analyzed by X-ray diffraction, scanning electron microscopy and Rutherford backscattering spectroscopy. PZT film shows a coexistence of tetragonal (lattice constant a=4.02 Angstrom and c=4.16 Angstrom) and rhombohedral (a=4.13 Angstrom. phases. For PLZT, lattice constant a was estimated for pseudocubic phase to be found 4.12 Angstrom. The lattice constant a, b and c to Bi4Ti3O12 film (orthorhombic symmetry) obtained were 5.58, 5.53 and 33.67 Angstrom, respectively. The films obtained shown good quality, homogeneity and the desired stoichiometry. Estimated thickness for one layer was approximately 1000 and 1300 Angstrom for BIT and PZT films, respectively. (C) 1999 Elsevier Science Limited. All rights reserved.