CdS nanobelts on Si substrate

被引:19
作者
Liu, WF [1 ]
Jin, CG [1 ]
Jia, C [1 ]
Yao, LZ [1 ]
Cai, WL [1 ]
Li, XG [1 ]
机构
[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Anhua 230026, Peoples R China
关键词
D O I
10.1246/cl.2004.228
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
CdS nanobelts were successfully synthesized by rapidly evaporating CdS nanoparticles. The nanobelts are single crystals with a hexagonal structure growing along the [001] direction. Photoluminescence measurement shows that the nanobelts have two emission bands around 517 and 735 nm, which should come from the intrinsic transition and the V-s(+) vacancies, respectively.
引用
收藏
页码:228 / 229
页数:2
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