Enhancement in Thermoelectric Properties Using a P-type and N-type Thin-Film Device Structure

In this study, we have fabricated thermoelectric devices with p-type and n-type conducting polymers and research the effect of device structure with the thermoelectric properties. It was found that the p-type and n-type structure greatly enhances the device's electrical conductivity due to separated charge carrier channels, but the Seebeck coefficient was reduced due to the increase of charge density by doping. Photoexcitation can improve the device's thermoelectric properties and can increase the Seebeck coefficient and electrical conductivity with increasing doping concentration simultaneously. The increases in both properties are due to the phonon-electron coupling effect: the concentration of electrons and holes are increased under illumination, and the phonon component of the heat flux can be reduced by phonon scattering. Consequently, the thermoelectric device structure can improve the efficiency of thermoelectric conversion. The P3HT:PCBM devices demonstrate a significant enhancement in the power factor (PF=S-2 sigma), with a maximum value of ZT=0.5 at 147 degrees C, in which the PF value (34.8 V/cm K-2) is bigger than Bi2Te3/Sb2Te3 superlattice devices at room temperature. POLYM. COMPOS., 34:1728-1734, 2013. (c) 2013 Society of Plastics Engineers