Atomically perfect bismuth lines on Si(001)

被引：95

作者：

Miki, K ^{[1
]}

Bowler, DR

Owen, JHG

Briggs, GAD

Sakamoto, K

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.59.14868

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomically perfect bismuth lines form on Si(001) by a selective desorption process around the temperature at which most of the bismuth desorbs from bismuth epitaxial layers. The lines are perpendicular to the silicon dimer rows; they are 1 nm wide and can be hundreds of nm long in a flat Si(001) surface. They are utterly free of kinks or other defects. In our proposed model three silicon dimers in the surface are replaced with two Bi dimers, with a rebonded missing dimer defect between them. It is suggested that the lines are straight because of kinetic reasons rather than thermodynamic ones - they form straight and are unable subsequently to kink.

引用

收藏

页码：14868 / 14871

页数：4

相关论文

共 9 条

[1] GALLIUM GROWTH AND RECONSTRUCTION ON THE SI(100) SURFACE [J].

BASKI, AA ;

NOGAMI, J ;

QUATE, CF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :245-248

[2] Formation of self-assembled quantum wires during epitaxial growth of strained GeSn alloys on Ge(100): Trench excavation by migrating Sn islands [J].

Deng, X ;

Yang, BK ;

Hackney, SA ;

Krishnamurthy, M ;

Williams, DRM .

PHYSICAL REVIEW LETTERS, 1998, 80 (05) :1022-1025

[3] Tight-binding modelling of materials [J].

Goringe, CM ;

Bowler, DR ;

Hernandez, E .

REPORTS ON PROGRESS IN PHYSICS, 1997, 60 (12) :1447-1512

[4] ONE-DIMENSIONAL METAL STRUCTURES AT DECORATED STEPS [J].

JUNG, T ;

SCHLITTLER, R ;

GIMZEWSKI, JK ;

HIMPSEL, FJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (05) :467-474

[5] REAL-TIME OBSERVATIONS OF VACANCY DIFFUSION ON SI(001)-(2X1) BY SCANNING-TUNNELING-MICROSCOPY [J].

KITAMURA, N ;

LAGALLY, MG ;

WEBB, MB .

PHYSICAL REVIEW LETTERS, 1993, 71 (13) :2082-2085

[6] DENSITY-MATRIX ELECTRONIC-STRUCTURE METHOD WITH LINEAR SYSTEM-SIZE SCALING [J].

LI, XP ;

NUNES, RW ;

VANDERBILT, D .

PHYSICAL REVIEW B, 1993, 47 (16) :10891-10894

[7] IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING [J].

OWEN, JHG ;

BOWLER, DR ;

GORINGE, CM ;

MIKI, K ;

BRIGGS, GAD .

SURFACE SCIENCE, 1995, 341 (03) :L1042-L1047

[8] ORDERING OF MISSING-ROW-DEFECTS FORMING (2XN)-BI PHASES ON THE SI(100) 2X1 SURFACE STUDIED BY THE SCANNING TUNNELING MICROSCOPY [J].

PARK, C ;

BAKHTIZIN, RZ ;

HASHIZUME, T ;

SAKURAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4A) :L528-L531

[9]

SAKAMOTO K, 1993, JPN J APPL PHYS 2, V32, pL204, DOI 10.1143/JJAP.32.L204