Charge storage model for hysteretic negative-differential resistance in metal-molecule-metal junctions

被引：49

作者：

Kiehl, RA ^{[1
]}

Le, JD

Candra, P

Hoye, RC

Hoye, TR

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[2] Macalester Coll, Dept Chem, St Paul, MN 55105 USA

[3] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2195696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental results on the electrical characteristics of Hg-alkanethiol/arenethiol-Au molecular junctions are used to develop a physical model for the hysteretic negative-differential resistance (NDR) for these, and possibly other, metal-molecule-metal junctions. The dependence of the room-temperature current-voltage characteristic on sweep direction and sweep rate is examined. Based on several specific electronic behaviors, it is concluded that the NDR is caused by slow charge capture (reduction or oxidation) during the forward sweep and the resultant effect on tunneling. The implications of this model on potential electronic applications are discussed. (c) 2006 American Institute of Physics.

引用

页数：3

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