Cracking phenomena in In0.25Ga0.75AS films on InP substrates

被引：20

作者：

Wu, X ^{[1
]}

Weatherly, GC ^{[1
]}

机构：

[1] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada

来源：

ACTA MATERIALIA | 1999年 / 47卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

compound semiconductors; fracture; analytical electron microscopy;

D O I：

10.1016/S1359-6454(99)00211-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The strain relaxation of a series of In0.25Ga0.75As films grown on (100) InP substrates (lattice mismatch = 2%) has been studied by electron microscopy. The mechanisms of strain relief (in the first stages of growth) occurred by cracking on (<0(1)over bar1>), and by twinning on (111) and ((1) over bar 11) planes. Cracking was a transitory process with the density of cracks being highest in a 20 nm thick film, while a 500 nm thick him was crack-free. These results are discussed in the context of different cracking and crack-healing models. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：3383 / 3394

页数：12

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