MBE of AlN on SiC and influence of structural substrate defects on epitaxial growth

被引：10

作者：

Ebling, DG

Rattunde, M

Steinke, L

Benz, KW

Winnacker, A

机构：

[1] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch 7, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

MBE; nitrides; SiC-substrate; growth kinetics;

D O I：

10.1016/S0022-0248(98)01364-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Aluminum nitride layers were grown on Si-terminated SIC (0 0 0 1) at various substrate temperatures, growth rates, and V/III-ratios in a RF-plasma enhanced MBE system. Surface morphology detected by AFM is strongly influenced by V/III-ratio. Smooth surfaces with a RMS-roughness below 1 nm are obtained for stoichiometric growth conditions giving the smallest FWHM of the XRD-rocking curves of 190 arcsec. For the growth of a more rough AlN-surface layer (RMS 2-24 nm) atomically smooth areas have been detected around micropipes by AFM indicating changed growth conditions. Lateral extension of this area is increased by reducing the growth rate or the V/III-ratio. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：411 / 414

页数：4

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