Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot

被引:14
作者
Connolly, KM [1 ]
Pivin, DP [1 ]
Ferry, DK [1 ]
Wieder, HH [1 ]
机构
[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
关键词
ballistic quantum dots; in-plane gate; InGaAs;
D O I
10.1006/spmi.1996.0082
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recent experiments have examined the magnetoconductance properties of mesoscopic quantum dots, defined in high mobility GaAs/AlGaAs heterojunctions utilizing split-gate techniques. Here, we report on a submicron, square quantum dot defined in a pseudomorphic InGaAs/GaAs single quantum well through an in-plane gate (IPG) technique. The high mobility of the sample ensures that the mean free path is larger than the characteristic dimensions of the quantum dot; hence transport through the structure is ballistic. These structures exhibit reproducible conductance fluctuations and weak localization. We discuss the results of low temperature studies of fluctuations observed in the low field magnetoconductance. These fluctuations appear to be regular and quasiperiodic, containing only a few frequencies in the Fourier spectrum. (C) 1996 Academic Press Limited
引用
收藏
页码:307 / 315
页数:9
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