Field-effect resistance of gated graphitic polymeric ribbons: Numerical simulations

被引:9
作者
Cresti, Alessandro [1 ,2 ,3 ]
Grosso, Giuseppe [1 ,2 ,3 ]
Parravicini, Giuseppe Pastori [4 ,5 ]
机构
[1] Univ Pisa, NEST CNR INFM, I-56127 Pisa, Italy
[2] Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy
[3] CEA, LETI Minatec, F-38054 Grenoble 9, France
[4] Univ Pavia, NEST CNR INFM, I-27100 Pavia, Italy
[5] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 11期
关键词
D O I
10.1103/PhysRevB.78.115433
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the electronic and transport properties of undistorted gated polymers of the polyacene family by exploiting the tight-binding model for the system Hamiltonian and the nonequilibrium Keldysh formalism for charge transport. Our simulations reveal that, for smooth gate potentials varying only along the ribbon longitudinal axis, the electronic conductance as a function of the energy is quantized and presents crossover from conducting to insulating regimes. We interpret this behavior on the basis of the band structures entailed by the bipartite honeycomb topology of the lattice and the symmetry of the ribbons with even or odd number of chains (even-odd effect).
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页数:7
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