Electro-optic birefringence in semiconductor vertical-cavity lasers

被引：29

作者：

Hendriks, RFM

vanExter, MP

Woerdman, JP

vanGeelen, A

Weegels, L

Gulden, KH

Moser, M

机构：

[1] PHILIPS RES LABS,PHILIPS OPTOELECT CTR,NL-5600 JA EINDHOVEN,NETHERLANDS

[2] PAUL SCHERRER INST,CH-8048 ZURICH,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 18期

关键词：

D O I：

10.1063/1.119340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Birefringence induced by the electro-optic effect is demonstrated in vertical-cavity surface-emitting lasers (VCSEL). This is done by comparing two types of optically pumped VCSELs: VCSELs with standard pin-doping and VCSELs with symmetrical pip-doping. The observed birefringence in these VCSELs differs by an order of magnitude, a difference that we ascribe to the presence and absence, respectively, of electro-optic birefringence. (C) 1997 American Institute of Physics.

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页码：2599 / 2601

页数：3

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