A metal-ferroelectric PbTiO3-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application

被引：5

作者：

Chen, FY ^{[1
]}

Fang, YK ^{[1
]}

Shu, CY ^{[1
]}

Chen, JR ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 11期

关键词：

D O I：

10.1109/16.543041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin PbTiO3-n-p(+) silicon diode (MFSS) has been developed, in which the switching voltage changes in proportion to the infrared light power. The infrared-sensitive parts consist of PbTiO3 ferroelectric thin films deposited by RF sputtering. A fast response with a rise time of 0.647 mu s has been attained, which is fairly fast compared with the other types of thermal infrared sensors. Additionally, there is a wide voltage variation of 9 V for sensing the infrared light from off-state-voltage of 11 V to on-state-voltage of 2 V in the device. In this paper, the current-voltage curves, the effect of infrared light power on switching voltage, and the effects of PbTiO3 thickness on switching voltage as well as sensitivity. to infrared light are reported in detail.

引用

页码：2019 / 2021

页数：3