Growth and characterization of gadolinium vanadate GdVO4 single crystals for laser applications

被引：64

作者：

Shimamura, K

Uda, S

Kochurikhin, VV

Taniuchi, T

Fukuda, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 03期

关键词：

Nd:GdVO4; modified Czochralski method; growth instability; step faceting; lasing properties; LD pumped laser;

D O I：

10.1143/JJAP.35.1832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown Nd3+-doped gadolinium vanadate (Nd:GdVO4) single crystals by a modified Czochralski method in which a high temperature gradient was maintained at the interface during growth. Step faceting occurred during crystal growth and the cause of the faceting is discussed in relation to the growth conditions. Laser diode (LD) pumped laser oscillations were demonstrated. The Nd:GdVO4 single crystal showed superior lasing properties to Nd:YVO4 and Nd:YAG single crystals.

引用

页码：1832 / 1835

页数：4

共 10 条

[1]

CHAI BHT, 1994, OSA PROC, V20, P41

[2] GROWTH AND CHARACTERIZATION OF PURE AND RARE-EARTH SUBSTITUTED YVO4 [J].