Electron microscopy study on structure of rolled-up semiconductor nanotubes

被引：29

作者：

Jin-Phillipp, NY

Thomas, J

Kelsch, M

Deneke, C

Songmuang, R

Schmidt, OG

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

Nanotubes;

D O I：

10.1063/1.2164913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By releasing strained epitaxial layers from their substrates, the layers roll up to form nanotubes. The structures of InAs/GaAs and SiGe/Si rolled-up nanotubes (RUNTs) are characterized by using transmission electron microscopy (TEM), electron diffraction, high-resolution TEM, and spatially resolved electron energy-loss spectroscopy. Freestanding RUNTs as well as their cross sections are investigated. It is found that the walls of the nanotubes are composed of alternating crystalline and noncrystalline oxide-containing layers. Defects may form in some nanotubes, where the rolling involves a misorientation. (c) 2006 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 12 条

[1] THE GROWTH OF THIN OXIDE LAYERS ON GAAS IN METHANOL [J].

BARBE, H ;

VANMEIRHAEGHE, RL ;

CARDON, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (09) :853-858

[2] Radial superlattices and single nanoreactors [J].

Deneke, C ;

Jin-Phillipp, NY ;

Loa, I ;

Schmidt, OG .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4475-4477

[3] Diameter scalability of rolled-up In(Ga)As/GaAs nanotubes [J].

Deneke, C ;

Müller, C ;

Jin-Phillipp, NY ;

Schmidt, OG .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (12) :1278-1281

[4] Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils [J].

Golod, SV ;

Prinz, VY ;

Mashanov, VI ;

Gutakovsky, AK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (03) :181-185

[5] Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays [J].

Prinz, VY ;

Seleznev, VA ;

Gutakovsky, AK ;

Chehovskiy, AV ;

Preobrazhenskii, VV ;

Putyato, MA ;

Gavrilova, TA .

PHYSICA E, 2000, 6 (1-4) :828-831

[6] A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths [J].

Prinz, VY ;

Chekhovskiy, AV ;

Preobrazhenskii, VV ;

Semyagin, BR ;

Gutakovsky, AK .

NANOTECHNOLOGY, 2002, 13 (02) :231-233

[7] Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes [J].

Schmidt, OG ;

Deneke, C ;

Kiravittaya, S ;

Songmuang, R ;

Heidemeyer, H ;

Nakamura, Y ;

Zapf-Gottwick, R ;

Müller, C ;

Jin-Phillipp, NY .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (05) :1025-1034

[8] Semiconductor tubes, rods and rings of nanometer and micrometer dimension [J].

Schmidt, OG ;

Deneke, C ;

Manz, YM ;

Müller, C .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :969-973

[9]

Schmidt OG, 2001, ADV MATER, V13, P756, DOI 10.1002/1521-4095(200105)13:10<756::AID-ADMA756>3.0.CO

[10]

2-F