Dielectric properties of reactor irradiated ferroelectric thin films

被引：16

作者：

Bittner, R ^{[1
]}

Humer, K

Weber, HW

Tyunina, M

Cakare, L

Sternberg, A

Kulikov, DV

Trushin, YV

机构：

[1] Austrian Univ, Inst Atom, Vienna, Austria

[2] Oulu Univ, Microelect Lab, Oulu, Finland

[3] Oulu Univ, EMPART Res Grp Infotech, Oulu, Finland

[4] Jozef Stefan Inst, Ljubljana, Slovenia

[5] Latvian State Univ, Inst Solid State Phys, Riga, Latvia

[6] RAS, AF Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

INTEGRATED FERROELECTRICS | 2001年 / 37卷 / 1-4期

关键词：

ferroelectrics; neutron irradiation; oxygen vacancies;

D O I：

10.1080/10584580108015686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation effects in highly oriented Pb1Zr0.53Ti0.47O3 (PZT), Pb0.94La0.06Zr0.65Ti0.35O3 (PLZT-6), and Pb1Zr1O3 (PZ) ferroelectric (FE) and antiferroelectric (AF) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for ITER (International Thermonuclear Experimental Reactor). The dielectric proper-ties (i.e. hysteresis loops, dielectric constants) of the films were investigated in a frequency range from 20 to 10(5) Hz and at temperatures up to 450 degreesC, before and after neutron irradiation to a neutron fluence of 5x10(21) m(-2) (E>0.1 MeV). The dielectric constant was measured during cooling with 1.7 degreesCmin(-1). The dielectric properties of the films were assessed before and after annealing in several steps up to 490 degreesC to remove the radiation induced defects.

引用

页码：275 / 283

页数：9

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