Hole transport in polycrystalline pentacene transistors

被引：98

作者：

Street, RA ^{[1
]}

Knipp, D ^{[1
]}

Völkel, AR ^{[1
]}

机构：

[1] Xerox PARC, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1456549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of pentacene thin-film transistors are used to explore hole transport mechanisms. The grain-boundary barrier model does not account for the data, since no field dependence of the mobility is observed over a wide range of gate and drain voltages. Instead, trapping provides a more satisfactory qualitative and quantitative interpretation. The subthreshold characteristics are attributed to deep acceptors in the pentacene film, and the conclusions are supported by numerical modeling. (C) 2002 American Institute of Physics.

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页码：1658 / 1660

页数：3

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