An improved electrochemical cell for the characterization of silicon/electrolyte interfaces

被引:31
作者
Bertagna, V
Rouelle, F
Chemla, M
机构
[1] UNIV PARIS 06,LAB ELECTROCHIM,F-75005 PARIS,FRANCE
[2] IBM CORP,LAB ANAL,F-91105 CORBEIL ESSONNES,FRANCE
关键词
silicon-electrolyte interface; silicon surface characteristics; semiconductor surface defects; surface potential measurements;
D O I
10.1023/A:1018419600882
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
An electrochemical cell was made of a Teflon tube which was tightly pressed on the surface of a silicon wafer. The Teflon/silicon contact was tight enough to prevent any infiltration of solution, because it was observed that confined electrolyte was a source of irreproducibility. The device was enclosed within a black polyvinyl box which protected the sample against room light but allowed irradiation with a controlled light intensity. The cell was fed under argon pressure with a thoroughly degassed electrolyte, and the whole volume inside was maintained under argon atmosphere. This cell permitted very stable and reliable rest potential measurement and current-potential diagrams. The method proved useful in the study of the influence of light irradiation and of dissolved oxygen or metal ions trace impurities in the electrolyte.
引用
收藏
页码:1179 / 1183
页数:5
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