Charge carrier mobility in substituted polythiophene-based diodes

被引：37

作者：

Roman, LS ^{[1
]}

Inganäs, O ^{[1
]}

机构：

[1] Linkoping Univ, IFM, Dept Phys, Appl Phys Lab, S-58183 Linkoping, Sweden

来源：

SYNTHETIC METALS | 2001年 / 125卷 / 03期

关键词：

polythiophene-based diodes; MEH-PPV-based diodes; semiconducting polymer;

D O I：

10.1016/S0379-6779(01)00402-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the transport properties of the semiconducting polymer poly(3-(2'-methoxy-5'-octylphenyl)thiophene) (POMeOPT). We have measured the current-voltage characteristics of single polymer layer devices in two regimes contact limited current and bulk-limited current. The passage from one regime to the other was done upon insertion of a conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) between the metallic electrode and the semiconducting polymer. With PEDOT-PSS as electrode, the polymer gave space-charge limited current (SCLC with the mobility dependent on electric field. Fitting the data, we were able to obtain important parameters, such as the zero-field mobility and the characteristic field. We have compared our results with the well-studied polymer poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) in similar experiments earlier reported. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：419 / 422

页数：4

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