YBCO films on metal substrates with biaxially aligned MgO buffer layers

被引:144
作者
Bauer, M [1 ]
Semerad, R [1 ]
Kinder, H [1 ]
机构
[1] Tech Univ Munich, Dept Phys, D-8000 Munich, Germany
关键词
D O I
10.1109/77.784678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We successfully deposited high quality YBCO films on metal tapes with biaxially aligned MgO buffer layers. E-gun evaporation on inclined substrates with a very high deposition rate of up to 250 nm/min was used for the deposition of the buffer layers. The MgO layers are biaxially textured with an in plane full width at half maximum of 8 degrees. The MgO [001]-axis is not parallel to the substrate normal but tilted significantly towards the deposition direction. YBCO films were deposited on ISD buffer layers by reactive thermal co-evaporation, The critical current density of the films was found to be anisotropic due to the tilt of the [001]-axis. Critical current densities up to 7.9 x 10(5) A/cm(2) at 77 K were achieved.
引用
收藏
页码:1502 / 1505
页数:4
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