Superconducting Dome in a Gate-Tuned Band Insulator

被引：951

作者：

Ye, J. T. ^{[1
,2
]}

Zhang, Y. J. ^{[1
,2
]}

Akashi, R. ^{[1
,2
]}

Bahramy, M. S. ^{[3
]}

Arita, R. ^{[1
,2
,3
]}

Iwasa, Y. ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[3] RIKEN, Correlated Electron Res Grp, Wako, Saitama 3510198, Japan

来源：

SCIENCE | 2012年 / 338卷 / 6111期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

TRANSITION-TEMPERATURE; SEMICONDUCTING SRTIO3; MOLYBDENUM-DISULFIDE; TRANSISTORS; PHYSICS; STATE;

D O I：

10.1126/science.1228006

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS2, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T-c occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

引用

页码：1193 / 1196

页数：4

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