Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed

被引：209

作者：

DeLongchamp, DM ^{[1
]}

Vogel, BM ^{[1
]}

Jung, Y ^{[1
]}

Gurau, MC ^{[1
]}

Richter, CA ^{[1
]}

Kirillov, OA ^{[1
]}

Obrzut, J ^{[1
]}

Fischer, DA ^{[1
]}

Sambasivan, S ^{[1
]}

Richter, LJ ^{[1
]}

Lin, EK ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

CHEMISTRY OF MATERIALS | 2005年 / 17卷 / 23期

关键词：

D O I：

10.1021/cm0513637

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Variations in the microstructure and hole mobility of the semiconducting polymer, poly(3-hexylthiophene) (P3HT), due to spin-coating speed were investigated. Regioregular P3HT films were prepared by spin coating at 2πT rad/min for the analysis. It was found that the P3HT conjugated plane varied from an edge-on to a plane-on orientation depending on the spin speed employed. It was observed that the adoption of a preferred plane-on orientation at fast spin speeds is more difficult to understand because of rapid drying that often results in a disordered material.

引用

页码：5610 / 5612

页数：3

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