Gallium oxide nanoribbons and nanosheets

被引：268

作者：

Dai, ZR ^{[1
]}

Pan, ZW ^{[1
]}

Wang, ZL ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Ctr Nanosci & Nanotechnol, Atlanta, GA 30332 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2002年 / 106卷 / 05期

关键词：

D O I：

10.1021/jp013228x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanoribbons and flat nanosheets of Ga2O3 have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic beta-Ga2O3 structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ( 100), the side surfaces are +/-(010) and +/-(10 (1) over bar) for nanoribbons and +/-(010), +/-(10 (1) over bar) and +/-(21 (2) over bar) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].

引用

页码：902 / 904

页数：3

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