Hysteretic magnetoresistance in Nd1-xSrxMnO3 films with controlled carrier density

被引：19

作者：

Kasai, M ^{[1
]}

Kuwahara, H ^{[1
]}

Moritomo, Y ^{[1
]}

Tomioka, Y ^{[1
]}

Tokura, Y ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 4B期

关键词：

perovskite manganite; magnetoresistance; pulsed laser deposition; double exchange; charge ordering; Nd1-xSrxMnO3;

D O I：

10.1143/JJAP.35.L489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetotransport characteristics and their nominal hole concentration (x) dependence were investigated in Nd1-xSrxMnO3 films. Thermal hysteresis in resistivity indicating the occurrence of a first-order phase transition was observed for x = 0.35 and 0.50, but essentially not for x = 0.40 and 0.45. The x = 0.35 and 0.50 films also show hysteresis in magnetoresistance. Once the resistivity is decreased by an order of magnitude by application of a magnetic field, the low-resistivity state is maintained even after removal of the field below a critical temperature. Observed hysteretic behavior suggests the presence of instabilities which compete with double-exchange interaction in specific hole concentration regions, which may be one of the origins of the colossal magnetoresistance.

引用

页码：L489 / L492

页数：4

共 12 条

[1] MAGNETORESISTANCE IN MAGNETIC MANGANESE OXIDE WITH INTRINSIC ANTIFERROMAGNETIC SPIN STRUCTURE [J].