Impact ionization rate and high-field transport in ZnS with nonlocal band structure

被引:20
作者
Reigrotzki, M
Redmer, R
Lee, I
Pennathur, SS
Dur, M
Wager, JF
Goodnick, SM
Vogl, P
Eckstein, H
Schattke, W
机构
[1] OREGON STATE UNIV,CTR ADV MAT RES,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331
[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
[3] CHRISTIAN ALBRECHTS UNIV KIEL,INST THEORET PHYS,D-24118 KIEL,GERMANY
关键词
D O I
10.1063/1.363550
中图分类号
O59 [应用物理学];
学科分类号
摘要
The impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation. The two resulting rates are then compared and simple fit formulas are presented. These are included in an ensemble Monte Carlo simulation of electron transport in bulk ZnS. The calculated impact ionization rate is then compared to experimental impact ionization coefficient data; reasonable agreement between the experimental data and the calculated impact ionization rate is obtained with an appropriate choice of optical deformation potentials. (C) 1996 American Institute of Physics.
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收藏
页码:5054 / 5060
页数:7
相关论文
共 32 条
[1]   EVIDENCE FOR BAND-TO-BAND IMPACT IONIZATION IN EVAPORATED ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].
ANG, WM ;
PENNATHUR, S ;
PHAM, L ;
WAGER, JF ;
GOODNICK, SM ;
DOUGLAS, AA .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2719-2724
[2]  
BARTH J, 1991, HDB OPTICAL CONSTANT, V2, P213
[3]   MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].
BHATTACHARYYA, K ;
GOODNICK, SM ;
WAGER, JF .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3390-3395
[4]   THEORY OF HIGH-FIELD ELECTRONIC TRANSPORT IN BULK ZNS AND ZNSE [J].
BRENNAN, K .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :4024-4030
[5]   THRESHOLDS OF IMPACT IONIZATION IN SEMICONDUCTORS [J].
BUDE, J ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3554-3561
[6]   IMPACT IONIZATION IN SEMICONDUCTORS - EFFECTS OF HIGH ELECTRIC-FIELDS AND HIGH SCATTERING RATES [J].
BUDE, J ;
HESS, K ;
IAFRATE, GJ .
PHYSICAL REVIEW B, 1992, 45 (19) :10958-10964
[7]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[8]  
COHEN ML, 1988, ELECT STRUCTURE OPTI, P142
[9]  
Hess K., 1991, Monte Carlo Device Simulation: Full Band and Beyond
[10]   1ST-PRINCIPLES THEORY OF QUASIPARTICLES - CALCULATION OF BAND-GAPS IN SEMICONDUCTORS AND INSULATORS [J].
HYBERTSEN, MS ;
LOUIE, SG .
PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1418-1421