Characterization of RF reactively sputtered Cu-In-S thin films

被引：11

作者：

He, YB ^{[1
]}

Polity, A ^{[1
]}

Gregor, R ^{[1
]}

Pfisterer, D ^{[1
]}

Österreicher, I ^{[1
]}

Hasselkamp, D ^{[1
]}

Meyer, BK ^{[1
]}

机构：

[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

CuInS2; thin films; photovoltaic; defects;

D O I：

10.1016/S0921-4526(01)00855-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The ternary compound semiconductor CuInS2 has attracted much attention owing to its potential applications in photovoltaic devices. We deposit CuInS2 films on Boat glass substrates by a reactive radio frequency sputter process using a Cu-In inlay target and H2S gas in one step. The morphology of the films was studied by Atomic Force Microscopy, X-ray Diffraction was used to check the crystal structure of the films. The composition of the layers was determined by Rutherford Back-scattering Spectroscopy and Energy-Dispersive X-ray Analysis. The electrical properties of the layers, i.e. the carrier concentration, Hall mobility, and specific resistivity and their dependencies on temperature were investigated by Hall effect measurements. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1074 / 1077

页数：4

共 9 条

[1] Characterization of CuInS2 thin films grown by close-spaced vapor sulfurization of co-sputtered Cu-In alloy precursors [J].