A transient model for the sublimation growth of silicon carbide single crystals

被引：18

作者：

Bubner, N ^{[1
]}

Klein, O ^{[1
]}

Philip, P ^{[1
]}

Sprekels, J ^{[1
]}

Wilmanski, K ^{[1
]}

机构：

[1] Weierstr Inst Angew Anal & Stochast, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 205卷 / 03期

关键词：

modelling; sublimation growth; heat and mass transfer; numerical simulation; conservation laws; partial differential equations;

D O I：

10.1016/S0022-0248(99)00274-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a transient model for the Modified Lely. Method for the sublimation growth of SiC single crystals which consists of all conservation laws including reaction-diffusion equations. The model is based on a mixture theory for the gas phase. First numerical results illustrate the influence of the geometrical set-up inside the reactor on the evolution of the temperature distribution. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：294 / 304

页数：11

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