The fabrication of filter-less fluorescence detection sensor array using CMOS image sensor technique

被引：20

作者：

Maruyama, Y

Sawada, K

Takao, H

Ishida, M

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Japan

[2] Toyohashi Univ Technol, Intelligent Sensing Syst Res Ctr, Toyohashi, Aichi 4418580, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2006年 / 128卷 / 01期

关键词：

fluorescence; filter-less; CMOS image sensor;

D O I：

10.1016/j.sna.2006.01.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A novel sensor array, which is filter-less fluorescence detection sensor, was successfully fabricated using CMOS 5 mu m silicon integrated circuit technology. Previously filter-less fluorescence detection sensors were proposed and fabricated, and they were able to sense fluorescence intensity. CMOS image sensor technique was applied for the filter-less fluorescence detection sensor, and it was able to operate a charge accumulation mode. Consequently, it was confirmed that general CMOS image sensor technique can be applied to the novel filter-less fluorescence detection sensor. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：66 / 70

页数：5