Examination of cross sections of thin films by atomic force microscopy

被引：10

作者：

Echeverria, F ^{[1
]}

Skeldon, P

Thompson, GE

Habazaki, H

Shimizu, K

机构：

[1] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan

[3] Keio Univ, Chem Lab, Yokohama, Kanagawa 223, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 10期

关键词：

D O I：

10.1149/1.1392538

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Procedures are described for the examination in cross section of thin films by atomic force microscopy (AFM), with reference to anodic films on III-V semiconductors and aluminium as examples of possible applications. It is shown that by preparing cross-sectional surfaces with a diamond knife, the thickness and morphology of anodic films can be disclosed by AFM at a resolution approaching that of transmission electron microscopy, with features such as local nonuniformity of film thickness and layering of the film being revealed. (C) 1999 The Electrochemical Society. S0013-4651(99)05-051-X. All rights reserved.

引用

页码：3711 / 3715

页数：5